Zn‐Mediated Interfacial MOF Growth Constructs Hollow Double‐Shell SiO x /C for Ultra‐Stable Lithium Storage

Comprehensive Summary Silicon oxide (SiO x ) is a high‐capacity anode candidate for lithium‐ion batteries, yet its widespread adoption is hindered by poor conductivity and interfacial instability. Traditional carbon‐coating methods often suffer from uneven coverage and weak adhesion, leading to rapid capacity fading. Herein, we propose a novel Zn‐anchored interfacial growth strategy to fabricate a hollow double‐shell SiO x /C composite (HSiO x /C‐1@NC). By utilizing surface‐grafted Zn species as uniform nucleation sites, a conformal ZIF‐8 shell is grown directly on SiO x /C and subsequently converted—through a single carbonization step—into a porous, nitrogen‐doped carbon layer with strong interfacial adhesion and tailored porosity. The resulting HSiO x /C‐1@NC anode exhibits exceptional long‐cycle stability, delivering a high reversible capacity of 811.8 mAh·g –1 at 1 A·g –1 after 1500 cycles, which ranks among the best performances reported for SiO x ‐based materials. The unique hollow dual‐shell architecture not only accommodates volume expansion and shortens Li + diffusion paths, but also establishes a robust and continuous conductive network that ensures efficient electron transfer and interfacial stability. This work provides a scalable and versatile interfacial engineering approach to designing high‐performance SiO x anodes, with potential applicability to other oxide‐based electrode systems.