Integration of Low‐Voltage Nanoscale MoS 2 Memristors on CMOS Microchips

ABSTRACT 2D materials (2DMs) are gaining increased attention for applications such as advanced electronics and neuromorphic computing due to their excellent electrical properties. Among these 2DMs, molybdenum disulfide (MoS 2 ) has shown promise as a resistive switching (RS) layer for memory, selectors, and neuromorphic systems. Electrochemical metallization (ECM) devices based on 2DMs offer ultra‐low energy consumption, large ON/OFF ratios, and switching at sub‐nanometer thicknesses. However, most demonstrations rely on isolated, micrometer‐scale structures fabricated on SiO 2 /Si substrates. The integration of 2DM‐based memristors onto silicon complementary metal‐oxide‐semiconductor (CMOS) platforms is rarely reported, particularly for MoS 2 . This work presents the first nanoscale ∼0.015 µm 2 active area MoS 2 ‐based memristors integrated in the back‐end‐of‐line of 350 nm‐technology CMOS microchips. One‐transistor‐one‐resistor (1T1R) cells exhibited forming‐free, nonvolatile RS with ultra‐low operating voltages (∼0.23 V for the SET and ∼−0.1 V for the RESET) and low cycle‐to‐cycle variability (6.7%). We provide the current‐voltage ( I – V ) characteristics of 19 MoS 2 ‐based 1T1R cells, revealing high repeatability across multiple cycles and devices. Our work represents a significant step toward integrating MoS 2 ‐based nonvolatile memristive devices onto silicon CMOS microchips.