材料科学
纳米机电系统
纳米尺度
抵抗
蚀刻(微加工)
纳米-
硅
光电子学
纵横比(航空)
反应离子刻蚀
制作
平版印刷术
干法蚀刻
薄脆饼
各向同性腐蚀
光刻胶
纳米技术
等离子体刻蚀
电子束光刻
纳米光刻
复合材料
纳米颗粒
图层(电子)
纳米医学
作者
Yanwen Wu,Deirdre L. Olynick,Andrew Goodyear,Christophe Peroz,Scott Dhuey,Xiaogan Liang,Stefano Cabrini
标识
DOI:10.1016/j.mee.2010.11.055
摘要
Cryogenic silicon etching using SF6-O2 at the sub-50 nm scale has been developed for nano-electromechanical systems (NEMS) and nano-photonics systems where high aspect ratio trenches are desired. It was found that the SF6-O2 chemistry at cryogenic temperatures (-100 to -130^oC) provides the best combination of etch rate, selectivity, and profile control for the smallest trenches etched. The profile can be well controlled with aspect ratios on the order of 8:1 for 20nm wide trenches. The various etch parameter trends will be discussed along with methods to achieve the optimal profiles and etch rates.
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