Self-Rectified Memristor with Bimodal Functionality and Forming Polarity Responses in Crossbar Array Applications

The development of emerging memory technology with high density crossbar memory array is widely investigated for fulfilling the high demand on future applications, e.g. artificial intelligence, internet-of-things (IoT), edge computing, sensing with storage etc [1] - [3]. In the array, the sneak path current is a fatal problem subverting the read/write margin with the crossbar configuration, where the leakage current from neighboring cells results in operation errors. The 1T-1R or 1S-1M configuration with good sneak path current suppressing ability is utilized, while with high cost and fabrication complexity. The self-rectified memristor with simple stacking fabrication process is presented as the highly scalable non-volatile memory for storage and computing configurations (Fig. 1).