Digitally aligned ZnO nanowire array based synaptic transistors with intrinsically controlled plasticity for short-term computation and long-term memory

S- and L-ZnO NW synaptic transistors prepared from arrays of ZnO NWs of different diameters (100 nm and 500 nm) enable the development of neuromorphic computers that use the same material to achieve both short-term computation and long-term memory.