异质结
X射线光电子能谱
带偏移量
外延
材料科学
分析化学(期刊)
氧化物
电子
溅射沉积
价带
凝聚态物理
光电子学
化学
带隙
溅射
薄膜
核磁共振
物理
纳米技术
图层(电子)
色谱法
量子力学
冶金
作者
Sahadeb Ghosh,Madhusmita Baral,Jayanta Bhattacharjee,Rajiv Kamparath,S. D. Singh,Tapas Ganguli
摘要
We have investigated the non-commutativity of the band offset in RF magnetron sputter deposited all oxide epitaxial α-Cr2O3/β-Ga2O3 heterojunction (HJ). The core-level x-ray photoelectron spectroscopy technique has been employed to probe the electronic structure of the interface formed between α-Cr2O3 and β-Ga2O3. Valence and conduction band offsets of 2.6 ± 0.2 and 0.9 ± 0.2 eV, respectively, for α-Cr2O3/β-Ga2O3 HJ have been determined from Kraut's method. These values are different from those reported for β-Ga2O3/α-Cr2O3 HJ, thus indicating that the α-Cr2O3/β-Ga2O3 HJ does not follow the band commutativity with respect to the growth sequence of the constituting layers forming the HJ. Furthermore, the band alignment at α-Cr2O3/β-Ga2O3 HJ is still type-II like β-Ga2O3/α-Cr2O3 HJ but with lower band offset values. Therefore, this HJ would also be able to confine the electrons and holes in β-Ga2O3 and α-Cr2O3 layers, respectively, with lower turn on voltage.
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