Design of terahertz IMPATT device

Combined with the research achievements of silicon material characteristics, the asymmetric depletion layer with mesa structure is used in the design of engineering parameters for the 225GHz pulsed-mode IMPATT device to improve the output power. Based on the operating frequency, output power, and other constrained conditions, the epitaxial layer parameters of IMPATT device are designed by theoretical calculation and equivalent derivation. The tolerance of the epitaxial layer parameters is simulated, analyzed, and optimized by Silvaco TCAD device process simulation software. A test system, built based on standard instruments and frequency multipliers and mixers, is employed to evaluate the electrical property of the IMPATT device samples. The test results are consistent with the design values. The operating frequency of the samples is (225±1)GHz and the output power is about 170mW.