光电阴极
极化(电化学)
光电子学
兴奋剂
材料科学
宽禁带半导体
铯
物理
电子
化学
量子力学
物理化学
核物理学
作者
Neeraj Tripathi,L. D. Bell,Shouleh Nikzad,F. Shahedipour‐Sandvik
摘要
We report on a Cs-free GaN photocathode structure in which band engineering at the photocathode surface caused by Si delta doping eliminates the need for use of cesium for photocathode activation. The structure is capped with a highly doped n+GaN layer. We have identified that n+GaN cap thickness plays an important role in limiting the effect of polarization induced charges at the GaN surface on the photocathode emission threshold. Physics based device simulations is used for further analysis of the experimental results. Our findings clearly illustrate the impact of polarization induced surface charges on the device properties including its emission threshold.
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