Mechanism of Semiconductor Opening Switch

In this paper we report the results of our recent study on the semiconductor opening switch. Physical processes, which underlie the operating principle of high-power opening switches based on the nanosecond interruption of super-dense reverse currents in semiconductor diodes (semiconductor opening switch effect), are simulated. The physical processes that occur in the semiconductor structure during the pumping and interruption of the currents are analyzed. The measurement results for the semiconductor opening switch are given and compared with the theoretical calculation results. These calculation results agree well with the measurement results.