50 nm line fabrication in 0.5 μm PMMA film on silicon substrates with a 20 kV e-beam

With an isopropyl alcohol (IPA) development, 50–100 nm lines are fabricated in 0.5 μm PMMA film on silicon substrates with a 20 kV e-beam. The slope of solubility rate in an IPA development is 10.2 at a high electron dose. A higher contrast and an improved resolution are obtained by using an IPA development.