SILICON MOLECULAR BEAM EPITAXY : A COMPREHENSIVE BIBLIOGRAPHY 1962-82

We have compiled a Bibliography of over two hundred references spanning the first twenty years of Silicon Molecular Beam Epitaxy. Si-MBE is defined broadly to include a range of publications involving high vacuum deposition of silicon. This definition permits the inclusion of early work in the field and alternative approaches to epitaxial growth such as partially ionized vapor deposition, ion beam epitaxy and solid phase epitaxy. References are listed with titles in ten subject categories. Within these categories papers are listed alphabetically by first author in chronological succession. Categories are cross referenced and English translations are cited, if available. Citations are limited to works in print or accepted for publication. Following the bibliography reference numbers are listed by authors alphabetically. Categories in the bibliography are listed below : I. REVIEWS (REF. 1-8) II. EARLY RESEARCH (REF. 9-43) (papers or projects completed by 1972) III. APPARATUS (REF. 44-48) IV. SUBSTRATE PREPARATION (REF. 49-61) V. HOMOEPITAXY A. UNDOPED OR WITH EVAPORATED DOPANTS (REF. 62-106) B. IMPLANTED DOPANTS (REF. 107-119) VI. IONIZED SILICON DEPOSITION (REF. 120-138) (including partially ionzed vapor deposition and ion beam epitaxy) VII. HETEROEPITAXY A. INSULATING SUBSTRATES (REF. 139-153) B. INSULATOR/SILICON GROWTH (REF. 154-157) C. METAL/SILICON GROWTH (REF. 158-178) D. SEMICONDUCTOR/SILICON GROWTH (REF. 179-193) VIII. PATTERNED EPITAXY (REF. 194) IX. DEVICE STRUCTURES (REF. 195-204) X. NON-EPITAXIAL DEPOSITION (REF. 205-223) (including solid phase epitaxy and laser annealing using evaporated silicon, and polycrystalling silicon deposition)