杂质
材料科学
双层
烧结
微观结构
掺杂剂
晶粒生长
陶瓷
兴奋剂
复合材料
化学工程
化学
生物化学
光电子学
有机化学
膜
工程类
作者
Hong Zhao,Xiaozhi Hu,Mark B. Bush
标识
DOI:10.1111/j.1151-2916.2001.tb00928.x
摘要
Microstructural development in the interface region of α‐Al 2 O 3 bilayer composites has been systematically investigated in terms of the sintering additive CaO–SiO 2 , residual impurity level in the starting powders (particularly MgO), and sintering conditions. The interfacial microstructure is strongly related to relative CaO–SiO 2 doping levels in the two constituting layers and to residual impurities in the starting powders. The presence of high levels of impurities in the starting powder can substantially modify the features of CaO–SiO 2 ‐Al 2 O 3 liquid at the interface region, thereby strongly influencing α‐Al 2 O 3 grain growth across the interface. Three grain growth modes in the interface region thus have been identified for different combinations of impurity level and CaO–SiO 2 dopant in the α‐Al 2 O 3 bilayer. This provides an important mechanism for controlling two‐dimensional structures in coatings, films, and layered ceramic materials for various engineering applications.
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