Fitting considerations of polynomial device models [semiconductor device modeling]
作者
Timo E. Rahkonen,A. Heiskanen
标识
DOI:10.1109/iscas.2003.1206149
摘要
In this paper, the fitting and usefulness of polynomial device models are discussed. It is shown that a polynomial model can provide an accurate AC fit of device nonlinearities and hence give accurate results in distortion simulations up to 35 dBc IM3 levels. Moreover, polynomial modeling is applicable in Volterra analysis, which allows the visualization of the fine structure of the distortion. The effects of the fitting range are also discussed.