Simulation-Based Investigation of Curtain Gas Effect on Metal-Organic Chemical Vapor Deposition Growth of Two-Dimensional Transition Metal Dichalcogenides

This study examines the impact of curtain gas flow on metal-organic chemical vapor deposition (MOCVD) growth of two-dimensional (2D) transition metal dichalcogenides using finite element method simulations and growth experiments. The simulation results demonstrate that the curtain gas changes precursor transfer dynamics, concentrates the flow toward the substrate, and potentially lowers contamination from chamber walls. The simulation findings are supported by experimental validation using tungsten and sulfur sources, which confirms that curtain gas flow is critical in enhancing the reproducibility of 2D WS2 growth. The research highlights the need to optimize gas flow dynamics in MOCVD processes to unlock the full potential of 2D materials in future electronic devices.