半金属
欧姆接触
肖特基势垒
材料科学
晶体管
光电子学
半导体
纳米技术
凝聚态物理
硅
物理
二极管
量子力学
电压
图层(电子)
作者
Xiaokun Wen,Wenyu Lei,Xinlu Li,Boyuan Di,Ye Zhou,Jia Zhang,Yuhui Zhang,Liufan Li,Haixin Chang,Wenfeng Zhang
出处
期刊:Nano Letters
[American Chemical Society]
日期:2023-09-14
卷期号:23 (18): 8419-8425
被引量:5
标识
DOI:10.1021/acs.nanolett.3c01554
摘要
Recent investigations reveal elemental semimetal (Bi and Sb) contacts fabricated with conventional deposition processes exhibit a remarkable capacity of approaching the quantum limit in two-dimensional (2D) semiconductor contacts, implying it might be an optimal option to solve the contact issue of 2D semiconductor electronics. Here, we demonstrate novel compound Dirac semimetal ZrTe2 contacts to MoS2 constructed by a nondestructive van der Waals (vdW) transfer process, exhibiting excellent ohmic contact characteristics with a negligible Schottky barrier. The band hybridization between ZrTe2 and MoS2 was verified. The bilayer MoS2 transistor with a 250 nm channel length on a 20 nm thick hexagonal boron nitride (h-BN) exhibits an ION/IOFF current ratio over 105 and an on-state current of 259 μA μm–1. The current results reveal that 2D compound semimetals with vdW contacts can offer a diverse selection of proper semimetals with adjustable work functions for the next-generation 2D-based beyond-silicon electronics.
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