拉曼光谱
拓扑绝缘体
各向异性
极地的
声子
凝聚态物理
极化率
材料科学
极化(电化学)
物理
光学
化学
分子
量子力学
物理化学
作者
Divya Rawat,Singh, Aditya,Singh, Niraj Kumar,Soni, Ajay
出处
期刊:Cornell University - arXiv
日期:2023-01-01
标识
DOI:10.48550/arxiv.2301.00350
摘要
Anisotropy of light-matter interactions in materials give remarkable information about the phonons and their interactions with electrons. We report the angle-resolved polarized Raman spectroscopy of single-crystal of Bi2Se3 to obtain the elements of Raman tensor for understanding the strength of polarization along different crystallographic orientations. Intensity variation in the polar plots corresponding to E_g^1 ~ 37 cm-1, A_1g^1 ~71 cm-1, E_g^2 ~ 130 cm-1, and A_1g^2 ~ 173 cm-1 suggests the higher differential polarizability along cross-plane (bc-plane). The polar patterns and the differences in elements of the Raman tensor provides the evidence of the fundamental electron-phonon and anisotropic light matter interactions in Bi2Se3.
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