氧化还原
阴极
费米能级
电子转移
化学
电化学
材料科学
化学工程
电子
电极
纳米技术
无机化学
物理化学
物理
量子力学
工程类
作者
Mingpu Wen,Weijin Kong,Jicheng Zhang,Qinghua Zhang,Wen Yin,Nian Zhang,Ke Chai,Yang Yu,Huaican Chen,Xiangfeng Liu
出处
期刊:ACS energy letters
[American Chemical Society]
日期:2022-10-28
卷期号:7 (12): 4185-4189
被引量:31
标识
DOI:10.1021/acsenergylett.2c01841
摘要
LiCoO 2 (LCO) is ideal for 3C electronics due to its high tap density. However, the excessive O → Co charge transfer at high delithiation leads to irreversible Co reduction, O release, and structural degradation, deteriorating the high-voltage performance of LCO. Herein, we propose to regulate the intrinsic Fermi level via uneven trace Zr/Mg doping. First, the increase of electron density in the Fermi level mitigates both the O oxidation/coupled Co reduction through alleviating the O → Co charge transfer, restraining the formations of Co 2+ and O 2 . This elevates Co redox activity and reduces O redox activity. In addition, the structural evolution of the cathode at delithiation is simplified. The modulated LCO delivers a high discharge capacity and a high cycling stability with 4.5 and 4.6 V ceilings. This study sheds new light on the modulation of Co/O redox chemistry and the reliable large-scale production of high-voltage LiCoO 2 .
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