ABSTRACT This study enhanced the optoelectronic properties of BIT (Bi 4 Ti 3 O 12 ) through Zr doping at the B site, constructing an Au/Bi 4 Ti 2.85 Zr 0.15 O 12 /Nb: SrTiO 3 (Au/BTZ/Nb:STO) device. Zr doping induces a red shift in the optical absorption band of BIT, narrowing the bandgap to ∼3.22 eV. Under 365 nm illumination, the device achieves optically controlled SET processes and switching ratio modulation, demonstrating short‐term optical synaptic plasticity that successfully simulates learning and forgetting processes. Through optical coupling signal modulation, the device exhibits long‐term potentiation (LTP) and long‐term depression (LTD) characteristics. An differential convolutional neural network (DCNN), which was constructed based on this device, achieved classification accuracies of 94.2% for the handwritten digit dataset (MNIST) and 83% for the Fashion‐MNIST dataset after 50 iterations of training, incorporating the device's conductance response parameters. The study demonstrates that the Au/BTZ/Nb:STO device combines outstanding optoelectronic performance with high‐precision neuromorphic computing capabilities, offering a novel pathway for next‐generation neural network computing.