化学
四方晶系
密度泛函理论
硅
亚稳态
晶体结构
结晶学
硅化物
电子结构
热电效应
电子能带结构
同步加速器
带隙
电荷密度
热电材料
钠
衍射
锌相
电阻率和电导率
化学物理
X射线晶体学
态密度
凝聚态物理
热导率
Crystal(编程语言)
热的
晶体结构预测
三元运算
作者
Morgan C. Redington,Leon Schutte,Doaa Omar A. Ali,Dmitrii Druzhbin,Rana Ghannam,Sylvain Pitié,Julien Fullenwarth,Michael Marek Koza,Jerome Alexandre Rouquette,Mickaël Beaudhuin,Wilson A. Crichton,Gilles Frapper,R. Viennois
标识
DOI:10.1021/acs.inorgchem.6c01570
摘要
The discovery of silicon-rich compounds with tailored electronic and thermal properties remains an important objective in materials chemistry. Here, we report the high-pressure/high-temperature (HP–HT) synthesis and theoretical characterization of a new sodium silicide, Na 2 Si 3, stabilized near 5 GPa. Na 2 Si 3 is recoverable to 1 bar. Evolutionary crystal structure prediction combined with in situ synchrotron X-ray diffraction and density functional theory calculations shows that Na 2 Si 3 adopts a tetragonal structure (space group P -42 1 m, Z = 2 ) composed of layered silicon slabs separated by sodium atoms. The bonding can be rationalized within the Zintl–Klemm framework with a formal charge distribution (Na + ) 2 (Si 0 )(Si – ) 2 . Thermodynamic calculations indicate that Na 2 Si 3 becomes stable at ∼5 GPa while remaining metastable at ambient pressure. Electronic structure calculations predict semiconducting behavior with an indirect band gap of ∼1.14 eV that increases under compression. The pentagonal topology of the silicon layers and the relatively low predicted thermal conductivity suggest potential interest for thermoelectric material design.
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