材料科学
残余应力
薄膜
形状记忆合金
溅射沉积
复合材料
极限抗拉强度
微电子机械系统
制作
溅射
透射电子显微镜
合金
光电子学
聚焦离子束
微观结构
抗压强度
压力(语言学)
沉积(地质)
高分辨率透射电子显微镜
基质(水族馆)
毯子
腔磁控管
扫描电子显微镜
同质性(统计学)
拉伸试验
奥氏体
物理气相沉积
蚀刻(微加工)
作者
E. Akbarnejad,Aleksander Kostka,Gowtham Arivanandhan,Yujiao Li,Alan Savan,Manfred Kohl,Alfred Ludwig
标识
DOI:10.1002/adem.202503175
摘要
Ti–Ni–Cu shape memory alloy (SMA) thin films with thicknesses ranging from 150 nm to 1000 nm were deposited by magnetron sputter deposition on planar Si/SiO 2 substrates and prestructured silicon‐on‐insulator nano‐hinges with the aim to provide optimal films for (bidirectional) microelectromechanical systems (MEMS) actuators. SMA films exhibited excellent compositional homogeneity with a minimal deviation of approximately 2 at.% across a 100 mm diameter wafer. The films transitioned from compressive residual stress in the as‐deposited state to tensile stress after annealing, with tensile stress values decreasing from 294 to 71 MPa with increasing film thickness. This correlated with a monotonic increase of the transformation temperatures. In situ transmission electron microscopy between room temperature and 100°C confirmed the B19 → B2 phase transformation, consistent with X‐ray diffraction results, which also revealed minor B19′ and Ti 2 Ni precipitates; atom probe tomography further verified Ti 2 Ni formation. An ion beam etching sidewall removal was implemented to eliminate unwanted deposition on nano‐hinges, supporting reliable fabrication of bidirectional MEMS actuators.
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