高功率脉冲磁控溅射
氩
分析化学(期刊)
钨
溅射
溅射沉积
电离
气体成分
腔磁控管
材料科学
离解(化学)
分压
等离子体
氧气
化学
原子物理学
薄膜
纳米技术
离子
热力学
环境化学
冶金
物理化学
物理
有机化学
量子力学
作者
J. Rezek,Tomáš Kozák,Nirmal Kumar,Stanislav Haviar
标识
DOI:10.1088/1361-6463/abd1a3
摘要
Abstract Reactive high-power impulse magnetron sputtering of tungsten oxide films using metallic tungsten target (72 mm in diameter) in argon-oxygen atmosphere (total pressure of 0.75 Pa) was carried out. The effect of various discharge parameters on the deposition rate and film oxygen concentration was investigated. Moreover, a model combining a reactive high-power impulse magnetron sputtering model and a discharge plasma model for the ionization region was successfully used for deeper insight into the effect of particular discharge parameters such as voltage pulse length (from 100 –800 µ s), oxygen partial pressure (from 0.25–0.50 Pa) or the value of pulse-averaged target power density (from 2.5–500 W cm −2 ). The results of the presented model, most notably trends in the target- and substrate oxide fraction, composition of particle fluxes onto the substrate, degree of W atom ionization or degree of O 2 molecule dissociation are discussed and put into context with experimentally measured quantities.
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