Broadband multimodal emission in Sb-doped CaZnOS-layered semiconductors

Mechanoluminescent (ML) smart materials are expected to be used in stress sensors, new displays, and advanced flexible optoelectronic devices, because of their unique mechanical-to-light energy conversion properties. However, the narrow-range ML emission characteristics of single materials limit their application scope. In this work, we report on the broadband multimodal emission in Sb-doped CaZnOS layered semiconductors. A series of CaZnOS layer-structured powders with different Sb3+ doping concentrations were synthesised using a high-temperature solid-phase method. The CaZnOS:Sb3+ phosphor achieved a wide range of ML spectra (400–900 nm), adjustable photoluminescence with double luminescent peaks located at 465 and 620 nm, and the X-ray-induced luminescence characteristics were systematically studied. We have also achieved ultra-broad warm white light ML emission of Sb3+ and Bi3+ co-doped samples. Therefore, it can be expected that these ML phosphors will be used in smart lighting, displays, visible stress sensors, and X-ray imaging and detections.