电离辐射
CMOS芯片
辐射
光学
CMOS传感器
图像传感器
图像质量
材料科学
光电子学
计算机科学
物理
辐照
计算机视觉
图像(数学)
核物理学
作者
Cyprien Muller,Timothé Allanche,Philippe Paillet,Olivier Duhamel,Vincent Goiffon,Serena Rizzolo,Thierry Lépine,Johanna Rousson,Jean-Pierre Baudu,J.-R. Macé,Hortense Desjonquères,Céline Monsanglant Louvet,Y. Ouerdane,A. Boukenter,Stéphane Girard
出处
期刊:Applied Optics
[Optica Publishing Group]
日期:2019-07-30
卷期号:58 (22): 6165-6165
被引量:2
摘要
We studied the impact of ionizing radiation at high dose levels (megagray, MGy) on the photometric budget of a radiation-resistant complementary metal oxide semi-conductor (CMOS)-based camera. This is achieved by measuring the radiation-induced degradation of each subpart, namely its illumination system, its optical system, and its CMOS image sensor. The acquired experimental results allow performing a rather realistic simulation of the radiation effects at the system level. Thanks to appropriate mitigation techniques, limited image darkening and color change are obtained at MGy dose levels. The presented results confirm the feasibility of a CMOS-based camera able to resist to MGy dose level of ionizing radiations with an acceptable degradation of the image quality, opening the way to its implementation in the most challenging harsh environments.
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