Fabrication of PbS QD/Silicon Hybrid Infrared Photodiode for LSI Platform

Near-infrared detectors by silicon based devices with large scale integration are very attractive for secure applications about image sensors. Beyond the silicon bandgap, we focus on PbS colloidal quantum dots (CQDs) and silicon integration. In this paper, we investigated fabrication processes of PbS CQDs and silicon hybrid IR detector. Temperature dependent photoluminescence of PbS CQDs thin films are measured and we found the bandgap of PbS CQDs do not change by various temperature. Optical response by a spectrometer were observed in 1550 nm range.