Optimized Power Modules for Silicon Carbide <sc>mosfet</sc>

A new 3-D power module dedicated to SiC mosfet is presented. It is based on printed circuit board embedded die technology and is compared with a standard power module. After considering the characteristics that contribute to optimal switching performances from the packaging point of view, both modules are characterized in terms of switching behavior and electromagnetic interference emissions. The results show better performances of the 3-D embedded die module with stray inductances below 2 nH and two times less common mode noise.