铁电性
材料科学
凝聚态物理
纳米电子学
单层
极化(电化学)
异质结
反铁电性
自旋电子学
范德瓦尔斯力
光电子学
Valleytronics公司
纳米技术
电介质
铁磁性
化学
物理
物理化学
有机化学
分子
作者
Anand Chandrasekaran,Avanish Mishra,Abhishek K. Singh
出处
期刊:Nano Letters
[American Chemical Society]
日期:2017-04-05
卷期号:17 (5): 3290-3296
被引量:275
标识
DOI:10.1021/acs.nanolett.7b01035
摘要
). The switching of polarization in this new class of ferroelectric materials occurs through a previously unknown intermediate antiferroelectric structure, thus establishing three states for applications in low-dimensional nonvolatile memory. We show that the armchair domain interface acts as an 1D metallic nanowire separating two insulating domains. In the case of the van der Waals bilayer we observe, interestingly, the presence of an ultrathin 2D electron/hole gas (2DEG) on the top/bottom layers, respectively, due to the redistrubution of charge carriers. The 2DEG is nondegenerate due to spin-orbit coupling, thus paving the way for spin-orbitronic devices. The coexistence of ferroelectricity, antiferroelectricity, 2DEG, and spin-orbit splitting in this system suggests that such 2D polar materials possess high potential for device application in a multitude of fields ranging from nanoelectronics to photovoltaics.
科研通智能强力驱动
Strongly Powered by AbleSci AI