范德瓦尔斯力
凝聚态物理
磁电阻
自旋电子学
隧道磁电阻
材料科学
电极
量子隧道
铁磁性
磁场
物理
分子
量子力学
作者
Zi-Ao Wang,Xiaomin Zhang,Wenkai Zhu,Faguang Yan,Pengfei Liu,Zhe Yuan,Kaiyou Wang
标识
DOI:10.1088/0256-307x/40/7/077201
摘要
The emergent van der Waals magnetic material is a promising component for spintronic devices with novel functionalities. Here, we report a transition of negative-to-positive magnetoresistance in Fe 3 GeTe 2 /Cr 2 Ge 2 Te 6 /Fe 3 GeTe 2 van der Waals all-magnetic tunnel junctions with increasing the applied bias voltage. A negative magnetoresistance is observed first in Fe 3 GeTe 2 /Cr 2 Ge 2 Te 6 /Fe 3 GeTe 2 tunnel junctions, where the resistance with antiparallel aligned magnetization of two Fe 3 GeTe 2 electrodes is lower than that with parallel alignment, which is due to the opposite spin polarizations of two Fe 3 GeTe 2 electrodes. With the bias voltage increasing, the spin polarization of the biased Fe 3 GeTe 2 electrode is changed so that the spin orientations of two Fe 3 GeTe 2 electrodes are the same. Our experimental observations are supported by the calculated spin-dependent density of states for Fe 3 GeTe 2 electrodes under a finite bias. The significantly bias voltage-dependent spin transport properties in van der Waals magnetic tunnel junctions open a promising route for designing electrical controllable spintronic devices based on van der Waals magnets.
科研通智能强力驱动
Strongly Powered by AbleSci AI