材料科学
纳米技术
互连
计算机科学
氧化物
灵敏度(控制系统)
机制(生物学)
半导体
异质结
电子工程
光电子学
工程类
电信
认识论
哲学
冶金
作者
Lin Liu,Yingyi Wang,Yinhang Liu,Shuqi Wang,Tie Li,Simin Feng,Sujie Qin,Ting Zhang
标识
DOI:10.1038/s41378-022-00410-1
摘要
., grain size, density of defects, and oxygen vacancies of materials), working temperatures, and device structures. This review introduces several concepts in the design of high-performance gas sensors by analyzing the sensing mechanism of heteronanostructural MOS-based sensors. In addition, the influence of the geometric device structure determined by the interconnection between the sensing materials and the working electrodes is discussed. To systematically investigate the sensing behavior of the sensor, the general sensing mechanism of three typical types of geometric device structures based on different heteronanostructural materials are introduced and discussed in this review. This review will provide guidelines for readers studying the sensing mechanism of gas sensors and designing high-performance gas sensors in the future.
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