生物传感器
MOSFET
场效应晶体管
生物分子
材料科学
阈值电压
光电子学
电介质
灵敏度(控制系统)
纳米技术
晶体管
电气工程
电子工程
电压
工程类
作者
Dibyendu Chowdhury,Bishnu Prasad De,Bhargav Appasani,Navaneet Kumar Singh,Rajib Kar,Durbadal Mandal,Nicu Bizon,Phatiphat Thounthong
出处
期刊:Sensors
[Multidisciplinary Digital Publishing Institute]
日期:2023-03-08
卷期号:23 (6): 2953-2953
被引量:18
摘要
In this article, the performance of n-type junctionless (JL) double-gate (DG) MOSFET-based biosensors with and without gate stack (GS) has been studied. Here, the dielectric modulation (DM) method is applied to detect biomolecules in the cavity. The sensitivity of n-type JL-DM-DG-MOSFET and n-type JL-DM-GSDG-MOSFET-based biosensors have also been evaluated. The sensitivity (ΔVth) improved in JL-DM-GSDG MOSFET/JL-DM-DG-MOSFET-based biosensors for neutral/charged biomolecules is 116.66%/66.66% and 1165.78%/978.94%, respectively, compared with the previously reported results. The electrical detection of biomolecules is validated using the ATLAS device simulator. The noise and analog/RF parameters are compared between both biosensors. A lower threshold voltage is observed in the GSDG-MOSFET-based biosensor. The Ion/Ioff ratio is higher for DG-MOSFET-based biosensors. The proposed GSDG-MOSFET-based biosensor demonstrates higher sensitivity than the DG-MOSFET-based biosensor. The GSDG-MOSFET-based biosensor is suitable for low-power, high-speed, and high sensitivity applications.
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