铁磁性
凝聚态物理
单层
磁电效应
电场
金属
材料科学
磁各向异性
各向异性
薄膜
联轴节(管道)
磁场
磁化
纳米技术
物理
多铁性
电介质
光电子学
光学
冶金
铁电性
量子力学
作者
Chen Ju,Chen Hu,Yipeng An,Shijing Gong
摘要
Manipulating magnetic properties by purely electrical means is a key challenge to improve information technology. In the three-dimensional ferromagnetic (FM) metal thin films, for example, the 3d-transitonal metal thin films Fe, Co, and Ni, the electric-field effect is restricted within the surface around 2–3 Å due to the screening effect, and it is hard to separate the bulk and surface states. In the present investigation, through first-principles calculations, we explore the electric-field effect on the two-dimensional (2D) FM metal monolayers Fe3GeTe2, Fe3GeSe2, and Fe3GeTeSe. It is found that magnetic anisotropy energy (MAE) of these three materials follows the sequence: Fe3GeTe2 > Fe3GeTeSe > Fe3GeSe2, because the atomic spin–orbital coupling of Te is much stronger than that of Se. The most interesting finding is that the electric-field effect on MAE is obviously enhanced in Fe3GeTeSe, which is nearly ten times of Fe3GeTe2 and Fe3GeSe2, and we find the large difference results from its asymmetric structure. Our investigation reveals the magnetoelectric (ME) mechanism and obtains the large ME effect, which is of great significance in the 2D magnetoelectronics.
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