材料科学
薄脆饼
半导体
光电子学
宽禁带半导体
辐射硬化
带隙
半导体器件
制作
辐射
纳米技术
工程物理
光学
物理
替代医学
医学
病理
图层(电子)
出处
期刊:Materials
[MDPI AG]
日期:2024-03-01
卷期号:17 (5): 1147-1147
被引量:23
摘要
In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection applications is given. The recent advancements in the fabrication of high-quality wafers have enabled remarkable WBG semiconductor device applications. The most common 4H-SiC, GaN, and β-Ga2O3 devices used for radiation detection are described. The 4H-SiC and GaN devices have already achieved exceptional results in the detection of alpha particles and neutrons, thermal neutrons in particular. While β-Ga2O3 devices have not yet reached the same level of technological maturity (compared to 4H-SiC and GaN), their current achievements for X-ray detection indicate great potential and promising prospects for future applications.
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