Implementation of habituation on single ferroelectric memristor

As a basic form of behavioral plasticity, habituation enables organisms to adjust their behaviors in response to external stimulation and is a fundamental ability of organisms. The emulation of habituation in hardware becomes critical in highly efficient artificial neuromorphic computing. However, few devices can mimic habituation because it includes two opposite responses to the same repeated stimulus. Herein, we fabricate a device of Au/LiTaO3/Pt, which not only shows synaptic plasticity, such as long-term potentiation/depression and paired-pulse facilitation, but also demonstrates habituation behavior. In addition, the habituation characteristics, which is dependent on the intensity and frequency of stimulus, are realized on the device. The analysis of electrical transport behavior indicates that the variation in resistance states correlates with the injection/extraction of free carriers during the resistance switching and suggests that the habituation behavior originates from the evolution of conductive domain walls in LiTaO3 ferroelectric.