材料科学
单层
光电探测器
范德瓦尔斯力
异质结
红外线的
光电子学
纳米技术
光学
物理
量子力学
分子
作者
Hao Chen,Zhou Cui,Rui Xiong,Huiwen Yu,Jiaxiang Li,Jiansen Wen,Xiaochun Huang,Cuilian Wen,Baisheng Sa
摘要
The photoelectric properties of Si 2 Te 2 monolayers and Si 2 Te 2 /Sb 2 Te 3 van der Waals heterostructures in the IR region suggest their potential to facilitate the development of two-dimensional IR photoelectric p–i–n junction devices.
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