电致发光
量子点
像素
二极管
光电子学
钥匙(锁)
发光二极管
过程(计算)
计算机科学
功率(物理)
材料科学
工程物理
物理
电子工程
电流(流体)
电流密度
量子
重点(电信)
纳米技术
电气工程
工程类
光功率
作者
Yuning Liang,Yizhou Xiao,Boyan Yang,Kehui Wang,Qingyuan Zuo,Xinshuang Zhan,Junpeng Lü,Zhenhua Ni,Zhicheng Su
摘要
ABSTRACT Full‐color Micro‐light‐emitting diode (Micro‐LED) displays are attracting intense interest for next‐generation microdisplays because they offer high brightness, high pixel density, low power consumption, fast response, and long operating lifetime. However, their practical development is still limited by the central challenge of achieving efficient, stable, and manufacturable full‐color operation at small pixel size. This article discusses three major routes toward full‐color microdisplays related to Micro‐LED technologies: monolithic approaches, transfer and bonding integration, and quantum dot (QD)‐based approaches, including color conversion Micro‐LEDs and electroluminescent QDs. The key progress and remaining bottlenecks of each route are examined, with emphasis on how the dominant challenge shifts from long‐wavelength nitride emission and device integration to pixel‐scale patterning, optical confinement, and emissive layer stability. By comparing these pathways in terms of process complexity, pixel density potential, full‐color performance, and current demonstration maturity, this review clarifies their respective strengths and limitations and aims to offer useful guidance for future practical full‐color Micro‐LED displays.
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