Preparation and characteristics of ITO thin films with high transmittance and low resistance by tilt magnetron sputtering

Using magnetron sputtering method,ITO thin films were successfully deposited on glass with target at a mixed atmosphere of Ar and O_2.The effect of sputtering process parameters on electro - optical characteristics of ITO thin films was discussed using UV - visible - infrared spectrophotometer and four - probe.The experimental results show that when the target angle is 23～25 degrees,the oxygen flow rate is 7～9sccm,sputtering time is 60～90 min and the sputtering power is 100～120W,transmittance of ITO thin films is more than 90%,and sheet resistance ranges from 10～20Ω/□.