期刊:IEEE Transactions on Nuclear Science [Institute of Electrical and Electronics Engineers] 日期:2018-08-01卷期号:65 (8): 2136-2139被引量:7
标识
DOI:10.1109/tns.2018.2841917
摘要
Ce-doped (Gd, La) 2 Si 2 O 7 (Ce:La-GPS) scintillator was found to have a good light output of around 40 000 photons/MeV, while some other parameters have not been determined so far. In order to clarify the cause for such a high light yield, some physical parameters have been estimated in this paper. The bandgap energy of Ce:La-GPS was evaluated to be over 7.13 ± 0.03 eV for (Gd 0.75 , La 0.25 ) 2 Si 2 O 7 . Although Ce:La-GPS had wider bandgap compared with the other oxide scintillators, its light output was larger than values for some other scintillators. Since quantum yield of Ce:La-GPS was as high as around 0.8, the product of transfer efficiency and electron-hole pair generation efficiency was estimated to be around 0.9, which was higher than for the other scintillators. Thus, Ce:La-GPS was suggested to have high the product of transfer efficiency and/or electron-hole pair generation efficiency.