异质结
拉曼光谱
材料科学
堆积
光电子学
透射电子显微镜
图层(电子)
蒸发
光电导性
光谱学
纳米技术
光学
化学
物理
有机化学
量子力学
热力学
作者
Hung-Pin Hsu,Der Yuh Lin,Guan Ting Lu,Tsung-Shine Ko,Hone Zern Chen
标识
DOI:10.1016/j.matchemphys.2018.09.002
摘要
The MoS2/ZnO and MoS2/Si heterojunction structures were fabricated by thermal evaporation and sol-gel methods. The crystal structures properties of MoS2/ZnO and MoS2/Si were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and transmission electron microscope (TEM). The XRD and Raman spectroscopy results indicate that the n-MoS2 film was successfully grown on p-doped ZnO or Si. The TEM images of MoS2/ZnO and MoS2/Si heterojunction structures shows the MoS2 stacking layer-by-layer covalented by van der Waals (vdW) force. The current–voltage (I–V) measurement shows the rectifying behavior of the heterojunction structures. The photoconductivity and photoresponsivity properties explore its carrier kinetic decay process. The results shows the potential applicability of MoS2/ZnO and MoS2/Si heterojunction structures as optoelectronic devices.
科研通智能强力驱动
Strongly Powered by AbleSci AI