日耳曼
铁电性
凝聚态物理
半导体
异质结
材料科学
范德瓦尔斯力
电场
极化(电化学)
光电子学
硅烯
化学
硅
物理
电介质
物理化学
量子力学
有机化学
分子
作者
Ziye Zhu,Xiaofang Chen,Wenbin Li,Jingshan Qi
摘要
We propose a van der Waals heterostructure CuInP2S6/germanene by combining two dimensional ferroelectric semiconductor CuInP2S6 with germanene. By density functional theory calculations, we find that the metal-semiconductor transition can be realized in the CuInP2S6/germanene heterostructure by controlling the ferroelectric polarization direction. CuInP2S6 induces the sublattice imbalance of germanene by interface interaction and thus makes it become a normal semiconductor. Then, two opposite ferroelectric polarization states in CuInP2S6/germanene lead to a different band alignment and finally determine its metallic or semiconductor properties. Large transition barriers from ferroelectric to antiferroelectric phases ensure its stability at room temperature. This is a pure electric field controlled metal-semiconductor transition, which has great application potential for exploring nonvolatile ferroelectric switches and memory devices.
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