极化(电化学)
铁电性
材料科学
电场
电导
领域(数学分析)
导电体
光电子学
磁畴壁(磁性)
凝聚态物理
物理
纳米技术
化学
电介质
量子力学
磁场
数学分析
物理化学
复合材料
数学
磁化
作者
Ji Ma,Jing Ma,Qinghua Zhang,Ren‐Ci Peng,Jing Wang,Chen Liu,Meng Wang,Ning Li,Mingfeng Chen,Xiaoxing Cheng,Peng Gao,Lin Gu,Long‐Qing Chen,Pu Yu,Jinxing Zhang,Ce‐Wen Nan
标识
DOI:10.1038/s41565-018-0204-1
摘要
Charged domain walls in ferroelectrics exhibit a quasi-two-dimensional conduction path coupled to the surrounding polarization. They have been proposed for use as non-volatile memory with non-destructive operation and ultralow energy consumption. Yet the evolution of domain walls during polarization switching makes it challenging to control their location and conductance precisely, a prerequisite for controlled read-write schemes and for integration in scalable memory devices. Here, we explore and reversibly switch the polarization of square BiFeO3 nanoislands in a self-assembled array. Each island confines cross-shaped, charged domain walls in a centre-type domain. Electrostatic and geometric boundary conditions induce two stable domain configurations: centre-convergent and centre-divergent. We switch the polarization deterministically back and forth between these two states, which alters the domain wall conductance by three orders of magnitude, while the position of the domain wall remains static because of its confinement within the BiFeO3 islands.
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