噪声系数
宽带
自动增益控制
增益压缩
低噪声放大器
放大器
可变增益放大器
开环增益
均衡(音频)
功率增益
电气工程
全差分放大器
电子工程
CMOS芯片
工程类
射频功率放大器
运算放大器
频道(广播)
作者
Huiyan Gao,Nayu Li,Min Li,Shaogang Wang,Zijiang Zhang,Yen‐Cheng Kuan,Xiaopeng Yu,Qun Jane Gu,Zhiwei Xu
标识
DOI:10.1109/ims30576.2020.9223868
摘要
This paper presents a wideband balanced variable-gain low-noise amplifier (VGLNA) implemented in a 55-nm CMOS process. A frequency-selective non-foster gain equalization technique is proposed to compensate the gain variation of interstage dual-resonant tanks. This VGLNA leverages current-steering technique to realize a phase-invariant 18-dB tunable gain range with a measured input 1-dB gain compression point (IP1dB) at 9 GHz from -12.2 dBm to -5 dBm. The LNA achieves a maximum power gain of 20.2 dB with ±0.5 dB gain variation and a minimum noise figure (NF) of 3.26 dB from 6.5 to 12 GHz. Owing to lumped Lange couplers, the input and output matching are both better than -14 dB. This chip occupies 1.44 mm × 0.68 mm area without pads and consumes 75 mW.
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