Improved negative bias stability of sol–gel processed Ti-doped SnO2 thin-film transistors

Abstract Sol–gel-processed Ti-doped SnO 2 thin-film transistors (TFTs) were successfully fabricated for the first time, and the effects of the concentration of the Ti dopant on their structural, chemical, and optical properties were investigated. The introduced Ti dopant showed potential as a promising oxygen vacancy suppressor. Additionally, the results showed that the 0.1 wt% Ti-doped SnO 2 TFT had a field-effect mobility of 10.21 cm 2 V −1 s −1 , a subthreshold swing of 0.87, and an I on / I off value of ∼1 × 10 8 , as well as good negative bias stress characteristics. The success of the Ti doping could be attributed to its small ionic size, high Lewis acid strength, and strong bonding strength. Therefore, the introduced sol–gel-processed Ti-doped SnO 2 TFTs stand as promising candidates with potential for application in transparent displays as well as larger area electronics applications.