响应度
光电探测器
光电流
材料科学
化学气相沉积
光电子学
偏压
单层
电极
电压
纳米技术
化学
量子力学
物理
物理化学
作者
Néstor Perea-López,Zhong Lin,Nihar Pradhan,Agustín Íñiguez-Rábago,Ana Laura Elías,Amber McCreary,Jun Lou,Pulickel M. Ajayan,Humberto Terrones,Luis Balicas,Mauricio Terrones
出处
期刊:2D materials
[IOP Publishing]
日期:2014-04-04
卷期号:1 (1): 011004-011004
被引量:199
标识
DOI:10.1088/2053-1583/1/1/011004
摘要
We report the fabrication of a photosensor based on as-grown single crystal monolayers of MoS2 synthesized by chemical vapor deposition (CVD). The measurements were performed using Au/Ti leads in a two terminal configuration on CVD-grown MoS2 on a SiO2/Si substrate. The device was operated in air at room temperature at low bias voltages ranging from −2 V to 2 V and its sensing capabilities were tested for two different excitation wavelengths (514.5 nm and 488 nm). The responsivity reached 1.1 mA W−1 when excited with a 514.5 nm laser at a bias of 1.5 V. This responsivity is one order of magnitude larger than that reported from photo devices fabricated using CVD-grown multilayered WS2. A rectifying-effect was observed for the optically excited current, which was four times larger in the direct polarization bias when compared to the reverse bias photocurrent. Such rectifying behavior can be attributed to the asymmetric electrode placement on the triangular MoS2 monocrystal. It is envisioned that these components could eventually be used as efficient and low cost photosensors based on CVD-grown transition metal dichalcogenide monolayers.
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