外延
兴奋剂
分析化学(期刊)
化学气相沉积
电阻率和电导率
退火(玻璃)
化学
电阻式触摸屏
分压
二硅烷
解吸
吸附
材料科学
矿物学
硅
光电子学
氧气
复合材料
电气工程
物理化学
色谱法
有机化学
图层(电子)
工程类
作者
Y. Shimamune,Masao Sakuraba,Takeshi Matsuura,Junichi Murota
出处
期刊:Journal de physique
[EDP Sciences]
日期:2001-08-01
卷期号:11 (PR3): Pr3-260
被引量:2
摘要
Epitaxial growth of heavily P-doped Si films at 450°C by alternately supplied PH 3 and SiH 4 has been investigated using an ultraclean low-pressure chemical vapor deposition (CVD) system. By exposing the Si(100) surface to PH 3 at a partial pressure of 0.26Pa at 450-750°C, two or three atomic-layers of P are adsorbed. Thermal desorption of P occurs at 650°C and only slightly at 450°C. By alternately supplied PH 3 at 300-450°C and SiH 4 at 450°C, epitaxial growth of heavily P-doped Si films of average P concentrations of ∼10 21 cm -3 are achieved. In the case of 4 cycles of alternately supplied PH 3 and SiH 4 at 450°C, 26nm-thick P-doped epitaxial Si film, with the average P concentration of 6x10 20 cm -3 , is formed. It is found that about 60% of P is electrically active even in the heavily P-doped epitaxial Si film and the resistivity is as low as ∼3x10 -4 Ωcm. By annealing the film at 550°C and above, it is found that the carrier concentration decreases and the resistivity increases. It is suggested that very low-resistive epitaxial Si film is formed by alternately supplied PH 3 and SiH 4 only at a very low-temperature such as 450°C.
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