Temperature dependence of the energy gap of InxSe1–x compounds

Abstract The optical absorption for photon energies of InxSe1–x thin films was used to determine the variation of the energy gap and the Urbach energy as a function of temperature in the range from 80 to 340 K at photon energies hν = 1.24 to 2.6 eV. The data were analyzed using the Varshni relation [Physica 34, 149 (1967)] for the temperature dependence of semiconductor band gaps. The formula by Yang et al. [cf., e.g., J. Phys. Chem. Solids 65, 1015 (2004)] for the temperature dependence of the energy width of the Urbach absorption edge was also used. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)