放电等离子烧结
材料科学
热电效应
退火(玻璃)
纳米颗粒
化学工程
微晶
氧化物
大气温度范围
热电材料
纳米技术
分析化学(期刊)
热导率
烧结
冶金
复合材料
化学
物理
工程类
气象学
热力学
色谱法
作者
Mengyao Li,Yu Liu,Yu Zhang,Cheng Chang,Ting Zhang,Dawei Yang,Ke Xiao,Jordi Llorca,Maria Ibáñez,Andreu Cabot
标识
DOI:10.1016/j.cej.2021.133837
摘要
• A surfactant-free approach to produce Cu-doped PbS nanoparticles is presented. • Oxide removal via a reduction annealing process allows enhancing electrical conductivity. • Incorporation of Cu improvement of thermoelectric figure of merit is demonstrated. • A maximum ZT of 1.22 at 773 K with a record average ZT ave = 0.76 for Pb 0.955 Cu 0.045 S is achieved. A versatile, scalable, room temperature and surfactant-free route for the synthesis of metal chalcogenide nanoparticles in aqueous solution is detailed here for the production of PbS and Cu-doped PbS nanoparticles. Subsequently, nanoparticles are annealed in a reducing atmosphere to remove surface oxide, and consolidated into dense polycrystalline materials by means of spark plasma sintering. By characterizing the transport properties of the sintered material, we observe the annealing step and the incorporation of Cu to play a key role in promoting the thermoelectric performance of PbS. The presence of Cu allows improving the electrical conductivity by increasing the charge carrier concentration and simultaneously maintaining a large charge carrier mobility, which overall translates into record power factors at ambient temperature, 2.3 mWm -1 K −2 . Simultaneously, the lattice thermal conductivity decreases with the introduction of Cu, leading to a record high ZT = 0.37 at room temperature and ZT = 1.22 at 773 K. Besides, a record average ZT ave = 0.76 is demonstrated in the temperature range 320–773 K for n-type Pb 0.955 Cu 0.045 S.
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