X射线光电子能谱
结合能
分析化学(期刊)
离子
材料科学
薄脆饼
化学状态
砷
原子物理学
化学
纳米技术
核磁共振
物理
色谱法
有机化学
冶金
作者
V. M. Mikoushkin,E. A. Makarevskaya,Dmitry A. Novikov,D. Marchenko
出处
期刊:Vacuum
[Elsevier]
日期:2022-03-01
卷期号:197: 110849-110849
被引量:5
标识
DOI:10.1016/j.vacuum.2021.110849
摘要
Cleaning the n-GaAs surface with low-energy Ar+ ions, required in X-ray photoelectron spectroscopy (XPS), has been recently shown to drastically change the core-level binding energies (BEs) of the irradiated surface layer, which prevents the diagnostics of the n-GaAs based semiconductors by the ordinary XPS. Synchrotron-based XPS measurements and modeling of As3d and Ga3d photoemission spectra for an Ar+ - etched n-GaAs wafer made it possible to find conditions for XPS testing the unmodified deep n-GaAs bulk. XPS resolution should be better than 0.5 eV and Ar+ ion energy should be less than 0.5 keV. Control of the Ga3d and As3d BEs in unmodified n-GaAs is important for chemical analysis since they are close to Ga2O3 and elemental arsenic BEs, respectively, which appear in oxidation, nitridation and other important chemical processes.
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