肖特基二极管
二极管
步进恢复二极管
半导体
反向二极管
光电子学
电流(流体)
p-n结
肖特基势垒
半导体器件
材料科学
电压
电场
凝聚态物理
物理
电气工程
工程类
纳米技术
量子力学
图层(电子)
标识
DOI:10.1002/9781119597124.ch5
摘要
This chapter explains how a juxtaposition of one p- and one n-type semiconductor creates a pn-junction or a semiconductor diode, a device that lets the current go in just one direction. The combination of two different types of semiconductors, p and n, creates a pn-junction and generates a transition region which creates an internal electrical voltage. In equilibrium, the diffusion current due to the difference of electrons and holes densitycancels the drift current due to this intrinsic electric field so the current outside the diode. The chapter also discusses two variations of the diode. The Schottky diode replaces one of the semiconductors by a metal, making it a faster and lower power diode. The tunnel diode, which can be explained only in terms of quantum mechanics, has a large reverse bias current and also results in a region of negative resistance.
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