四方晶系
空位缺陷
超导电性
凝聚态物理
材料科学
结晶学
晶体结构
物理
化学
作者
Zhongnan Guo,Fun Sun,Bingling Han,Kun Lin,Liang Zhou,Wenxia Yuan
摘要
S resulted from the localization of the 3d electrons of Fe. Moreover, the accompanied metal-insulator transition induced by Fe vacancy mainly belonged to the Mott mechanism because the vacancy did not significantly alter the band structure. These results not only provide deep insight into the effect of Fe vacancy in Fe chalcogenides, but also provide a basis to effectively induce SC in Fe sulfides by decreasing the number of Fe vacancies.
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