GeSn/SiGeSn RCE photodetectors: A comparative study based on Franz-Keldysh effect and quantum confined stark effect

Ge-based photodetectors are currently studied for providing cheap solution to long haul and short distance communication and optical interconnects. Tensile strained Ge layers grown with suitable barriers show direct gap type I band alignment. We have worked on resonant cavity enhanced (RCE) photodetectors using GeSn/SiGeSn type I structure. Performance of photodetectors using strong Quntum Confined Stark Effect, and Franz-Keldysh Effect in these structures and properties related to photodetection are studied in this paper.