半导体
范德瓦尔斯力
材料科学
凝聚态物理
可塑性
物理
光电子学
复合材料
量子力学
分子
作者
Tian‐Ran Wei,Min Jin,Yuecun Wang,Hongyi Chen,Zhiqiang Gao,Kunpeng Zhao,Pengfei Qiu,Zhiwei Shan,Jun Jiang,Rongbin Li,Lidong Chen,Jian He,Xun Shi
出处
期刊:Science
[American Association for the Advancement of Science]
日期:2020-07-30
卷期号:369 (6503): 542-545
被引量:224
标识
DOI:10.1126/science.aba9778
摘要
Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (Ξ) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics.
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